Paper Title:
Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si02 Interface
  Abstract

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Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
1427-1432
DOI
10.4028/www.scientific.net/MSF.83-87.1427
Citation
D. Vuillaume, A. Mir, D. Goguenheim, "Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si02 Interface", Materials Science Forum, Vols. 83-87, pp. 1427-1432, 1992
Online since
January 1992
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