Paper Title:
Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
1433-1438
DOI
10.4028/www.scientific.net/MSF.83-87.1433
Citation
J.L. Benton, M.A. Kennedy, J. Michel, L. C. Kimerling, "Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching", Materials Science Forum, Vols. 83-87, pp. 1433-1438, 1992
Online since
January 1992
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Price
$32.00
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