Paper Title:
An Analysis of Point Defect Fluxes during SiO2 Precipitation in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
1451-1456
DOI
10.4028/www.scientific.net/MSF.83-87.1451
Citation
W.J. Taylor, T.Y. Tan, U.M. Gösele, "An Analysis of Point Defect Fluxes during SiO2 Precipitation in Silicon", Materials Science Forum, Vols. 83-87, pp. 1451-1456, 1992
Online since
January 1992
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Price
$32.00
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