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High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient

Journal Materials Science Forum (Volumes 83 - 87)
Volume Defects in Semiconductors 16
Edited by Gordon Davies, G.G. DeLeo and M. Stavola
Pages 1509-1518
DOI 10.4028/www.scientific.net/MSF.83-87.1509
Citation A. Katz et al., 1992, Materials Science Forum, 83-87, 1509
Authors A. Katz, A. Feingold, S.J. Pearton, M. Geva, S. Nakahara, E. Lane
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