Paper Title:
Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes
  Abstract

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Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
1545-1550
DOI
10.4028/www.scientific.net/MSF.83-87.1545
Citation
J. M. Langer, P. Revva, "Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes", Materials Science Forum, Vols. 83-87, pp. 1545-1550, 1992
Online since
January 1992
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