Paper Title:
In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation
  Abstract

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Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
303-308
DOI
10.4028/www.scientific.net/MSF.83-87.303
Citation
A. Romano-Rodríguez, J. Vanhellemont, "In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation", Materials Science Forum, Vols. 83-87, pp. 303-308, 1992
Online since
January 1992
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Price
$32.00
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