Paper Title:
A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
  Abstract

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Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
333-338
DOI
10.4028/www.scientific.net/MSF.83-87.333
Citation
J. L. Lindström, B. G. Svensson, W.M. Chen, "A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon", Materials Science Forum, Vols. 83-87, pp. 333-338, 1992
Online since
January 1992
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Price
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