An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon |
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| Journal | Materials Science Forum (Volumes 83 - 87) |
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| Volume | Defects in Semiconductors 16 |
| Edited by | Gordon Davies, G.G. DeLeo and M. Stavola |
| Pages | 39-44 |
| DOI | 10.4028/www.scientific.net/MSF.83-87.39 |
| Citation | A.D. Marwick et al., 1992, Materials Science Forum, 83-87, 39 |
| Authors | A.D. Marwick, M. Wittmer, G.S. Oehrlein |
| Full Paper | 
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