Paper Title:
An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon
  Abstract

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Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
39-44
DOI
10.4028/www.scientific.net/MSF.83-87.39
Citation
A.D. Marwick, M. Wittmer, G.S. Oehrlein, "An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon ", Materials Science Forum, Vols. 83-87, pp. 39-44, 1992
Online since
January 1992
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