Hydrogen Effusion from Monocrystalline B-Doped Silicon |
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| Journal | Materials Science Forum (Volumes 83 - 87) |
|---|---|
| Volume | Defects in Semiconductors 16 |
| Edited by | Gordon Davies, G.G. DeLeo and M. Stavola |
| Pages | 45-50 |
| DOI | 10.4028/www.scientific.net/MSF.83-87.45 |
| Authors | D. Ballutaud, P. de Mierry, J.C. Pesant, Richard Rizk, A. Boutry-Forveille, M. Aucouturier |
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