Paper Title:
Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
653-658
DOI
10.4028/www.scientific.net/MSF.83-87.653
Citation
J. Michel, L. C. Kimerling, J.L. Benton, D.J. Eaglesham, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, Y.-H. Xie, R.F. Ferrante, "Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon", Materials Science Forum, Vols. 83-87, pp. 653-658, 1992
Online since
January 1992
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Price
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