Paper Title:
DX Levels in Si-Doped AlxGa1-xAs Containing Boron
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
829-834
DOI
10.4028/www.scientific.net/MSF.83-87.829
Citation
P. M. Mooney, M.A. Tischler, B.D. Parker, "DX Levels in Si-Doped AlxGa1-xAs Containing Boron", Materials Science Forum, Vols. 83-87, pp. 829-834, 1992
Online since
January 1992
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Price
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