Measurements of the Diffusion Coefficient of Hydrogen in Silicon Monitored by Catalyzed Enhanced Oxygen Diffusion Jumps |
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| Journal | Materials Science Forum (Volumes 83 - 87) |
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| Volume | Defects in Semiconductors 16 |
| Edited by | Gordon Davies, G.G. DeLeo and M. Stavola |
| Pages | 87-92 |
| DOI | 10.4028/www.scientific.net/MSF.83-87.87 |
| Citation | R.C. Newman et al., 1992, Materials Science Forum, 83-87, 87 |
| Authors | R.C. Newman, J.H. Tucker, S.A. McQuaid |
| Full Paper | 
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