Materials Science & Technology

FULLTEXT SEARCH
NEW: Advanced Search

Elastic Energy Loss due to the Reorientation of H around B in Silicon

Journal Materials Science Forum (Volumes 83 - 87)
Volume Defects in Semiconductors 16
Edited by Gordon Davies, G.G. DeLeo and M. Stavola
Pages 9-14
DOI 10.4028/www.scientific.net/MSF.83-87.9
Citation G. Cannelli et al., 1992, Materials Science Forum, 83-87, 9
Authors G. Cannelli, R. Cantelli, M. Capizzi, Francesco Cordero, A. Frova, M. Stutzmann, F. Trequattrini
Full Paper PDF Get the full paper by clicking here

First page example

Preview of first page