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Elastic Energy Loss due to the Reorientation of H around B in Silicon

Journal Materials Science Forum (Volumes 83 - 87)
Volume Defects in Semiconductors 16
Edited by Gordon Davies, G.G. DeLeo and M. Stavola
Pages 9-14
DOI 10.4028/www.scientific.net/MSF.83-87.9
Authors G. Cannelli, R. Cantelli, M. Capizzi, Francesco Cordero, A. Frova, M. Stutzmann, F. Trequattrini
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