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Defects in Semiconductors 16

Materials Science Forum Volumes 83 - 87

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• p581 Local Mode Spectroscopy of OH and NH Complexes in Semi-Insulating Gallium Arsenide   [ 288 K ]
  Authors: B. Pajot, C. Song, C. Porte
• p587 Effects of Reverse Bias Annealing and Zero Bias Annealing on Ti/n-GaAs and Au/n-GaAs Schottky Barriers Containing Hydrogen   [ 250 K ]
  Authors: Guo-Gang Qin, M.H. Yuan, S.X. Jin, Xi Xhen Chen, Li Ping Wang
• p593 Structure and Stability of Cadmium-Defect Complexes in III-V-Compounds Formed after H₂-Plasma Treatment   [ 331 K ]
  Authors: A. Baurichter, Manfred Deicher, S. Deubler, Doris Forkel-Wirth, J. Meier, W. Witthuhn
• p599 Shallow and Deep Radiative Levels of H-Complexes in GaAs   [ 318 K ]
  Authors: M. Capizzi, C. Coluzza, V. Emiliani, P. Frankl, A. Frova, F. Sarto
• p605 Dissociation Kinetics of Hydrogen-Neutralized Si Donors and DX Centers in AlGaAs   [ 232 K ]
  Authors: G. Roos, N.M. Johnson, C. Herring, J.S. Harris
• p611 Equilibrium Sites and Relative Stability of Atomic and Molecular Hydrogen in GaAs   [ 352 K ]
  Authors: L. Pavesi, Paolo Giannozzi
• p617 Unintentional Hydrogenation of III-V Semiconductors during Device Processing   [ 238 K ]
  Authors: S.J. Pearton, C.R. Abernathy, W.S. Hobson, U.K. Chakrabarti, J. Lopata, D.M. Kozuch, Michael Stavola
• p623 Hydrogen Passivation of Shallow and Deep Centers in GaSb   [ 261 K ]
  Authors: A.Y. Polyakov, S.J. Pearton, R.G. Wilson, P. Rai-Choudhury, R.J. Hillard, X.J. Bao, M. Stam, A.G. Milnes, T.E. Schlesinger
• p629 Hydrogen in InAs on GaAs Heterostructures: Diffusion Behavior, Electrical and Optical Effects   [ 225 K ]
  Authors: B. Theys, S. Kalem, A. Lusson, Jacques Chevallier, C. Grattepain, M. Stutzmann
• p635 Effects of Hydrogen in Si-Doped AlAs   [ 324 K ]
  Authors: E. Tuncel, H. Sigg, E. Meier, L. Pavesi, Paolo Giannozzi, D.M. Martin, F. Morier-Genoud, F.K. Reinhart
• p641 Energy Transfer in Rare-Earth-Doped III-V Semiconductors   [ 664 K ]
  Authors: Kenichiro Takahei, Akihito Taguchi
• p653 Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon   [ 225 K ]
  Authors: Jürgen Michel, Lionel C. Kimerling, J.L. Benton, D.J. Eaglesham, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, Y.-H. Xie, R.F. Ferrante
• p659 Theory of Substitutional Rare Earth Impurities in Semiconductors   [ 179 K ]
  Authors: Christian Delerue, Michel Lannoo
• p665 Spectroscopic Investigation of the Er Site in GaAs:Er   [ 433 K ]
  Authors: Paul B. Klein, F.G. Moore, H.B. Dietrich
• p671 Excitation Mechanism of the Erbium 4F Emissions in GaAs   [ 323 K ]
  Authors: J.E. Colon, D.W. Elsaesser, Y.K. Yeo, R.L. Hengehold, G.S. Pomrenke