Paper Title:
Formation of Silicon Carbide Grains Structure and Their Growth in Polycrystalline SiC Obtained by the Reaction-Sintering Technique
  Abstract

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Periodical
Materials Science Forum (Volumes 94-96)
Edited by
G. Abbruzzese and P. Brozzo
Pages
829-838
DOI
10.4028/www.scientific.net/MSF.94-96.829
Citation
A.P. Gashin, G.S. Oleinik, "Formation of Silicon Carbide Grains Structure and Their Growth in Polycrystalline SiC Obtained by the Reaction-Sintering Technique ", Materials Science Forum, Vols. 94-96, pp. 829-838, 1992
Online since
January 1992
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