Papers by keyword «Nitrogen»
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Mössbauer Study of Fe-Powder Mechanically Alloyed by N and C
Authors: V.M. Nadutov, J. Rawers
Keywords: Carbon, Fe-Powder, Mössbauer Spectroscopy, Nitrogen
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Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
Authors: L.B. Rowland, Al A. Burk, C.D. Brandt
Keywords: Doping, Epitaxial Growth, Nitrogen, Vapor-Phase Epitaxy (VPE)
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Theoretical Studies on Defects in SiC
Authors: Peter Deák, A. Gali, J. Miró, R. Gutierrez, A. Sieck, Thomas Frauenheim
Keywords: Electronic Structure, Intrinsic Defect, Nitrogen, Oxygen, Stability
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Effect of Soluble Nitrogen on the Creep Strength of an Austenitic 25Cr-20Ni Steel
Authors: I. Park, F. Masuyama, Takeshi Endo
Keywords: Creep, High Temperature, I-S Pair, Nitrogen, Solid Solution Hardening, Stainless Steel
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Synthesis of B-N-C Ceramics from Piperazine-Borane Complex
Authors: Yasuyuki Goto, Makato Sasaki, K. Mukaida
Keywords: BNC Ceramics, Boron, Carbon, Ceramization, Nitrogen, Piperazine, Precursor Method
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The Effect of N on the Segregation Kinetics of Mo in a Fe-3.5%Mo-N(100) Single Crystal Studied by Constant Temperature Heating Method
Authors: E.C. Viljoen, W.A. Jordaan, C. Uebing, J. du Plessis
Keywords: Darken Model, Molybdenum, Nitrogen, Segregation Kinetics, Surface Segregation
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Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
Authors: S.G. Sridhara, Song Bai, O. Shigiltchoff, Robert P. Devaty, W.J. Choyke
Keywords: Absorption, Band Structure, Conduction Bands, Donors, Nitrogen
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High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing
Authors: D. Panknin, H. Wirth, W. Anwand, Gerhard Brauer, Wolfgang Skorupa
Keywords: Aluminium, Annealing, Electrical Activation, Ion Implantation, Nitrogen
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Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC
Authors: K. Chatty, S. Banerjee, T.P. Chow, Ronald J. Gutmann
Keywords: 4H SiC, MOSFET, Nitrogen, Phosphorus, RESURF
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Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
Authors: K. Chatty, V. Khemka, T.P. Chow, Ronald J. Gutmann
Keywords: 4H SiC, Diode, Junction Rectifiers, Nitrogen, Phosphorus
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