Papers by keyword «Oxygen» and «Dislocation»
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The Segregation Behaviour of Oxygen at Dislocations in Silicon
Authors: Semih Senkader, Peter R. Wilshaw, D. Gambaro, Robert Falster
Keywords: Czochralski, Dislocation, Mechanical Strength, Oxygen, Silicon, Warpage
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Impurity Effect on the Dislocation DLTS Spectrum in Silicon
Authors: O.V. Feklisova, G. Mariani-Regula, Bernard Pichaud, E.B. Yakimov
Keywords: Deep Level Transient Spectroscopy, Dislocation, Metal, Oxygen, Silicon
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Lifetime and Material Characteristics of Multicrystalline Silicon Measured with High Spatial Resolution
Authors: Stephan W. Glunz, C. Hebling, W. Warta
Keywords: Contacless Lifetime Mapping, Dislocation, Fourier-Transform Spectroscopy, Impurity Denuded Zone, Minority Carrier Lifetime, Modulated Free-Carrier Absoption, Oxygen, Solar Cell, Thermal Treatment
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Influence of a Preliminary Phosphorus Diffusion on the Evaluation of the Recombination Strenght of Dislocations in Czochralski Silicon Wafers
Authors: Isabelle Périchaud, J.J. Simon
Keywords: Dislocation, Minority Carriers Diffusion Length, Oxygen, Phosphorus Diffusion, Precipitates
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Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
Authors: Semih Senkader, A. Giannattasio, Robert Falster, Peter R. Wilshaw
Keywords: Czochralski, Diffusivity, Dislocation, Oxygen, Silicon, Warpage
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Luminescence of Dislocations and Oxide Precipitates in Si
Authors: Sergio Pizzini, E. Leoni, Simona Binetti, Maurizio Acciarri, Alessia Le Donne, Bernard Pichaud
Keywords: Dislocation, Luminescence, Oxygen, Plastic Deformation, Silicon
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Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium
Authors: Jan Vanhellemont, Olivier De Gryse, Steven Hens, Piet Vanmeerbeek, Dirk Poelman, Paul Clauws, Eddy Simoen, C. Claeys, Igor Romandic, Antoon Theuwis, G. Raskin, H. Vercammen, P. Mijlemans
Keywords: Carbon, Copper (Cu), Diffusion, Dislocation, Germanium, Hydrogen, Iron, Nickel Ni, Nitrogen, Oxygen, Point Defects, Vacancy
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Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time
Authors: M. Badylevich, Vitaly Kveder, Valeri I. Orlov, Yu. Osipyan
Keywords: Dislocation, Magnetic Field, Oxygen, Silicon, Spin-Dependent Reactions, Unlocking Stress
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