Solid State Phenomena

Paper Title	Page
Characterization of Ion-Implanted Heavily-Doped Silicon by Optical Reflection Authors: A. Borghesi, G. Guizzetti, L. Nosenzo	1
Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon Authors: H. Jaeger	11
Channeling, RBS and Mössbauer Measurements on ¹⁵¹Eu Implanted Si Authors: A. Bhagawat, M.B. Kurup, K.G. Prasad, R.P. Sharma	33
Cross-Sectional Transmission Electron Microscope Study of Bf₂+-Implanted (001) and (111) Silicon Authors: Lih Juann Chen, C.W. Nieh, Chih Hsing Chu	45
EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon Authors: I.E. Bondarenko, Eugene B. Yakimov	59
Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation Authors: Sandro Solmi, Marco Servidori	65
Electrical Characterization of Buried Layers in Silicon Authors: Wolfgang R. Fahrner, E. Klausmann	85
Mechanism of Buried Oxide Formation by Implanted Oxygen Authors: J. Stoemenos	115
Diffusion of Ion-Implanted Group III and V Impurities in SlO₂ Authors: A.H. Van Ommen	133
Annealing of Implants Reduces Lattice Defects and 1/f Noise Authors: L.K.J. Vandamme	153

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Main Themes

Ion Implantation in Semiconductors