Main Theme:
Ion Implantation in Semiconductors
Volumes 1 - 2
doi:
10.4028/www.scientific.net/SSP.1-2
Paper Titles published in this Main Theme:
| Paper Title |
Page |
|
Characterization of Ion-Implanted Heavily-Doped Silicon by Optical Reflection
Authors: A. Borghesi, G. Guizzetti, L. Nosenzo
|
1
|
|
Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
Authors: H. Jaeger
|
11
|
|
Channeling, RBS and Mössbauer Measurements on 151Eu Implanted Si
Authors: A. Bhagawat, M.B. Kurup, K.G. Prasad, R.P. Sharma
|
33
|
|
Cross-Sectional Transmission Electron Microscope Study of Bf2+-Implanted (001) and (111) Silicon
Authors: Lih Juann Chen, C.W. Nieh, Chih Hsing Chu
|
45
|
|
EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon
Authors: I.E. Bondarenko, Eugene B. Yakimov
|
59
|
|
Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
Authors: Sandro Solmi, Marco Servidori
|
65
|
|
Electrical Characterization of Buried Layers in Silicon
Authors: Wolfgang R. Fahrner, E. Klausmann
|
85
|
|
Mechanism of Buried Oxide Formation by Implanted Oxygen
Authors: J. Stoemenos
|
115
|
|
Diffusion of Ion-Implanted Group III and V Impurities in SlO2
Authors: A.H. Van Ommen
|
133
|
|
Annealing of Implants Reduces Lattice Defects and 1/f Noise
Authors: L.K.J. Vandamme
|
153
|
Showing 1 to 10 of 27 Paper Titles