Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon |
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| Journal | Solid State Phenomena (Volumes 1 - 2) |
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| Volume | Ion Implantation in Semiconductors |
| Edited by | D. Stievenard and J.C. Bourgoin |
| Pages | 11-32 |
| DOI | 10.4028/www.scientific.net/SSP.1-2.11 |
| Citation | H. Jaeger, 1991, Solid State Phenomena, 1-2, 11 |
| Authors | H. Jaeger |
| Full Paper | 
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