Paper Title:
Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 1-2)
Edited by
D. Stievenard and J.C. Bourgoin
Pages
11-32
DOI
10.4028/www.scientific.net/SSP.1-2.11
Citation
H. Jaeger, "Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon", Solid State Phenomena, Vols. 1-2, pp. 11-32, 1988
Online since
January 1991
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.