Annealing of Implants Reduces Lattice Defects and 1/f Noise |
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| Journal | Solid State Phenomena (Volumes 1 - 2) |
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| Volume | Ion Implantation in Semiconductors |
| Edited by | D. Stievenard and J.C. Bourgoin |
| Pages | 153-158 |
| DOI | 10.4028/www.scientific.net/SSP.1-2.153 |
| Citation | L.K.J. Vandamme, 1991, Solid State Phenomena, 1-2, 153 |
| Authors | L.K.J. Vandamme |
| Full Paper |
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