Channeling, RBS and Mössbauer Measurements on 151Eu Implanted Si |
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| Journal | Solid State Phenomena (Volumes 1 - 2) |
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| Volume | Ion Implantation in Semiconductors |
| Edited by | D. Stievenard and J.C. Bourgoin |
| Pages | 33-43 |
| DOI | 10.4028/www.scientific.net/SSP.1-2.33 |
| Citation | A. Bhagawat et al., 1991, Solid State Phenomena, 1-2, 33 |
| Authors | A. Bhagawat, M.B. Kurup, K.G. Prasad, R.P. Sharma |
| Full Paper | 
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