Paper Title:
Defects and Doping Effects in CdTe and CulnS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing
  Abstract

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Periodical
Solid State Phenomena (Volumes 1-2)
Edited by
D. Stievenard and J.C. Bourgoin
Pages
343-359
DOI
10.4028/www.scientific.net/SSP.1-2.343
Citation
H.Y. Ueng, H.L. Hwang, "Defects and Doping Effects in CdTe and CulnS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing", Solid State Phenomena, Vols. 1-2, pp. 343-359, 1988
Online since
January 1991
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