Structure of Radiation Damage in Germanium Induced by Te+-Implantation Near Channeling Conditions |
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| Journal | Solid State Phenomena (Volumes 1 - 2) |
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| Volume | Ion Implantation in Semiconductors |
| Edited by | D. Stievenard and J.C. Bourgoin |
| Pages | 465-473 |
| DOI | 10.4028/www.scientific.net/SSP.1-2.465 |
| Citation | M.G. Kalitzova et al., 1991, Solid State Phenomena, 1-2, 465 |
| Authors | M.G. Kalitzova, D.S. Karpuzov, N.K. Pashov |
| Full Paper | 
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