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Physics of DX Centers in GaAs Alloys

Solid State Phenomena Volume 10

• Papers
• Abstracts

• p1 Elaboration and n-Type Doping of GaAlAs Epitaxial Layers   [ 1 M ]
  Authors: Pierre Gibart, P. Basmaji
• p25 Band Structure of the GaAs/AlAs Solid Solutions   [ 1 M ]
  Authors: M. Guzzi, J.L. Staehli
• p53 Optically-Detected Magnetic Resonance of Si-Doped GaAlAs   [ 484 K ]
  Authors: T.A. Kennedy, E. Glaser
• p65 Photo-Hall Characterization in GaAlAs   [ 343 K ]
  Authors: M. Mizuta
• p73 Thermal Emission Processes from DX Centers   [ 1 M ]
  Authors: Enrique Calleja, E. Munoz
• p99 Carrier Capture Processes at DX Centers   [ 770 K ]
  Authors: E. Munoz, Enrique Calleja
• p121 Studies of the DX Center Using Hydrostatic Pressure   [ 899 K ]
  Authors: D.K. Maude, Jean Claude Portal, R. Murray, T.J. Foster, L. Dmowski, L. Eaves, R. Newman, P. Basmaji, Pierre Gibart, J.J. Harris, R.B. Beall
• p145 Radiative Recombination in Ga_xAl_1-xAs   [ 664 K ]
  Authors: J.C.M. Henning
• p163 Mössbauer Spectroscopy Studies of the DX Center   [ 688 K ]
  Authors: D.L. Williamson, Pierre Gibart
• p181 Electron Paramagnetic Resonance Studies of the DX Center in GaAlAs   [ 493 K ]
  Authors: Hans Jürgen von Bardeleben
• p195 The A₁-T₂ Transition of Substitutional Deep Impurities   [ 367 K ]
  Authors: Y. Foulon, Michel Lannoo, G. Allan
• p209 Review of DX Center Models   [ 566 K ]
  Authors: Michel Lannoo
• p233 Negative-U Aspects of DX-Center in Al_x-Ga_1-xAs   [ 1011 K ]
  Authors: Jerzy M. Langer, J.E. Dmochowski, L. Dobaczewski, W. Jantsch, G. Brunthaler
• p253 A Critical View of DX Models   [ 481 K ]
  Authors: J.C. Bourgoin
• p265 DX Centers in Superlattices   [ 299 K ]
  Authors: S.L. Feng, J.C. Bourgoin