Elaboration and n-Type Doping of GaAlAs Epitaxial Layers |
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| Journal | Solid State Phenomena (Volume 10) |
|---|---|
| Volume | Physics of DX Centers in GaAs Alloys |
| Edited by | J.C. Bourgoin |
| Pages | 1-24 |
| DOI | 10.4028/www.scientific.net/SSP.10.1 |
| Citation | Pierre Gibart et al., 1991, Solid State Phenomena, 10, 1 |
| Authors | Pierre Gibart, P. Basmaji |
| Full Paper | 
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