Paper Title:
Etch Rate Depth Profiling by Single Wafer Etching Equipment
  Abstract

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Periodical
Solid State Phenomena (Volumes 103-104)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
107-110
DOI
10.4028/www.scientific.net/SSP.103-104.107
Citation
E. Bellandi, A. C. Elbaz, R. Piagge, F. Pipia, M. Alessandri, "Etch Rate Depth Profiling by Single Wafer Etching Equipment", Solid State Phenomena, Vols. 103-104, pp. 107-110, 2005
Online since
April 2005
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Price
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Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of...
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