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On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

Journal Solid State Phenomena (Volumes 103 - 104)
Volume Ultra Clean Processing of Silicon Surfaces VII
Edited by Paul Mertens, Marc Meuris and Marc Heyns
Pages 19-22
DOI 10.4028/www.scientific.net/SSP.103-104.19
Online since April, 2005
Authors Bart Onsia, Matty Caymax, Thierry Conard, Stefan De Gendt, F. De Smedt, A. Delabie, C. Gottschalk, Marc M. Heyns, M. Green, S. Lin, Paul W. Mertens, W. Tsai, Chris Vinckier
Keywords Atomic Layer Deposition ALD, High-k, Interface, Oxide, Ozone
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