Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing |
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| Journal | Solid State Phenomena (Volumes 103 - 104) |
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| Volume | Ultra Clean Processing of Silicon Surfaces VII |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 241-244 |
| DOI | 10.4028/www.scientific.net/SSP.103-104.241 |
| Citation | Rita Vos et al., 2005, Solid State Phenomena, 103-104, 241 |
| Online since | April, 2005 |
| Authors | Rita Vos, E. Kesters, Sylvain Garaud, R. De Waele, Karine Kenis, Marcel Lux, H. Kraus, James Snow, Denis Shamiryan, Gabriela Catana, W. Deweerd, T. Schram, S. DeGendt, Paul W. Mertens |
| Keywords | Backside Cleaning, High-k, Metal Gate, Single Wafer Cleaning |
| Abstract | In this work the removal of different metallic and particulate contaminants relevant for high-k/metal gate processing is studied. Best cleaning efficiency of both silicon and nitride substrates is achieved using a HF/HNO3-based cleaning resulting in a particle removal efficiency higher than 90% and metal removal down to 1010 at/cm2. |
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