Paper Title:
Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing
  Abstract

In this work the removal of different metallic and particulate contaminants relevant for high-k/metal gate processing is studied. Best cleaning efficiency of both silicon and nitride substrates is achieved using a HF/HNO3-based cleaning resulting in a particle removal efficiency higher than 90% and metal removal down to 1010 at/cm2.

  Info
Periodical
Solid State Phenomena (Volumes 103-104)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
241-244
DOI
10.4028/www.scientific.net/SSP.103-104.241
Citation
R. Vos, E. Kesters, S. Garaud, R. De Waele, K. Kenis, M. Lux, H. Kraus, J. Snow, D. Shamiryan, G. Catana, W. Deweerd, T. Schram, S. DeGendt, P. W. Mertens, "Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing", Solid State Phenomena, Vols. 103-104, pp. 241-244, 2005
Online since
April 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Alexander Lippert, P. Engesser, Garry Ferrell, J. Klitzke, Martin Köffler, Franz Kumnig, Jörg Leberzammer, Alexander Pfeuffer, Rainer Obweger, Harry Sax, Harald Okorn-Schmidt
155
Authors: Atsuro Eitoku, James Snow, Rita Vos, Karine Kenis, Paul W. Mertens
177
Authors: Don Dussault, F. Fournel, V. Dragoi
Chapter 8: Cleaning for 3D Applications
Abstract:Current work describes development, testing and verification of a single wafer megasonic cleaning method utilizing a transducer design that...
269
Authors: Kurt Wostyn, Wouter Baekelant, Jens Rip, Michael Haslinger, Karine Kenis, Herbert Struyf, Martine Claes, Paul W. Mertens, Stefan De Gendt
Chapter 8: Cleaning and Wet Etching for Silicon Photo-Voltaic Applications
Abstract:The cumulative installed solar power generation has been rising exponentially over the past decade. This has lead to a concomitant rise in...
293
Authors: Sherjang Singh, Pranesh Muralidhar, Samuel Mallabar, Silas Scott
Chapter 4: FEOL: Photoresist Removal, General Cleaning
Abstract:In advanced technology nodes (sub 20nm), the gate & active contact architecture has become very complex. This architecture not only...
105