Paper Title:
Novel Photo Resist Stripping for Single Wafer Process
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 103-104)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
297-300
DOI
10.4028/www.scientific.net/SSP.103-104.297
Citation
A. Okuyama, K. Asada, H. Abe, H. Iwamoto, Y. Okamoto, T. Wada, "Novel Photo Resist Stripping for Single Wafer Process", Solid State Phenomena, Vols. 103-104, pp. 297-300, 2005
Online since
April 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kurt K. Christenson, Jeffery W. Butterbaugh, Thomas J. Wagener, Nam Pyo Lee, Brent Schwab, Michael Fussy, John Diedrick
109
Authors: Mike S. Ameen, Aseem K. Srivastava, Ivan L. Berry
Abstract:We have investigated the use of Rs and SIMS measurements to quantify substrate erosion due to plasma ashing and subsequent wet cleaning in...
129
Authors: Andrey Zakharov, Markus Lenski, Sven Metzger, Christian Krüger
Abstract:A layer of hardened material (crust) forms on the surface of photo resist (PR) during the implantation. This crust can be described as highly...
265
Authors: Y.J. Kim, J.H. Lee, K.J. Seo, C.R. Yoon, E.S. Roh, J.K. Cho, T. Hattori
Abstract:Stripping high-dose ion-implanted (HDI) photoresists is considered as one of the most challengeable processes in the semiconductor...
269
Authors: Sandip Halder, Rita Vos, Masayuki Wada, Martine Claes, Karine Kenis, Paul W. Mertens, Prasanna Dighe, Sanda Radovanovic, Gavin Simpson, Roger Sonnemans
Chapter 3: FEOL: Photo Resist Removal
Abstract:With the continuous decrease of feature size of semiconductor devices new process related challenges must be overcome continuously. One of...
113