High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation |
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| Journal | Solid State Phenomena (Volumes 103 - 104) |
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| Volume | Ultra Clean Processing of Silicon Surfaces VII |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 3-6 |
| DOI | 10.4028/www.scientific.net/SSP.103-104.3 |
| Citation | Alessio Beverina et al., 2005, Solid State Phenomena, 103-104, 3 |
| Online since | April, 2005 |
| Authors | Alessio Beverina, M.M. Frank, H. Shang, S. Rivillon, F. Amy, C.L. Hsueh, V.K. Paruchuri, R.T. Mo, M. Copel, E.P. Gusev, M.A. Gribelyuk, Y.J. Chabal |
| Keywords | Atomic Layer Deposition, Germanium, High-k Dielectrics, Infrared Spectroscopy, Passivation, Scaling |
| Abstract | We review the impact of semiconductor surface preparation on the performance of metal-oxidesemiconductor field-effect transistor (MOSFET) gate stacks. We discuss high-permittivity dielectrics such as hafnium oxide and aluminum oxide on silicon and on the high carrier mobility substrate germanium. On Si, scaling of the gate stack is the prime concern. On Ge, fundamental issues of chemical and electrical passivation need to be resolved. Surface treatments considered include oxidation, nitridation, hydrogenation, chlorination, and organic functionalization. |
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