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Surface Preparation Techniques for High-k Deposition on Ge Substrates

Journal Solid State Phenomena (Volumes 103 - 104)
Volume Ultra Clean Processing of Silicon Surfaces VII
Edited by Paul Mertens, Marc Meuris and Marc Heyns
Pages 31-36
DOI 10.4028/www.scientific.net/SSP.103-104.31
Citation Sven Van Elshocht et al., 2005, Solid State Phenomena, 103-104, 31
Online since April, 2005
Authors Sven Van Elshocht, A. Delabie, B. Brijs, Matty Caymax, Thierry Conard, Bart Onsia, Riikka Puurunen, Olivier Richard, Jan Van Steenbergen, Chao Zhao, Marc Meuris, Marc M. Heyns
Keywords Atomic Layer Deposition ALD, Germanium, HfO2, MOCVD, Surface Preparation
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