Surface Preparation Techniques for High-k Deposition on Ge Substrates |
| Journal |
Solid State Phenomena (Volumes 103 - 104) |
| Volume |
Ultra Clean Processing of Silicon Surfaces VII |
| Edited by |
Paul Mertens, Marc Meuris and Marc Heyns |
| Pages |
31-36 |
| DOI |
10.4028/www.scientific.net/SSP.103-104.31 |
| Citation |
Sven Van Elshocht et al., 2005, Solid State Phenomena, 103-104, 31 |
| Online since |
April, 2005 |
| Authors |
Sven Van Elshocht, A. Delabie, B. Brijs, Matty Caymax, Thierry Conard, Bart Onsia, Riikka Puurunen, Olivier Richard, Jan Van Steenbergen, Chao Zhao, Marc Meuris, Marc M. Heyns |
| Keywords |
Atomic Layer Deposition ALD, Germanium, HfO2, MOCVD, Surface Preparation |
| Full Paper |
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