Effect of Chemical Solution on the Stability of Low-k Films |
|
| Journal | Solid State Phenomena (Volumes 103 - 104) |
|---|---|
| Volume | Ultra Clean Processing of Silicon Surfaces VII |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 349-352 |
| DOI | 10.4028/www.scientific.net/SSP.103-104.349 |
| Citation | E. Kesters et al., 2005, Solid State Phenomena, 103-104, 349 |
| Online since | April, 2005 |
| Authors | E. Kesters, Quoc Toan Le, Mikhail R. Baklanov, Werner Boullart, Paul W. Mertens |
| Keywords | Contact Angle, Low-k Compatibility, Low-k Films, Spectroscopic Ellipsometry (SE), Strip Plasma |
| Abstract | The compatibility of chemical solutions with different pH is studied on microporous silica-based (SiOCH) and mesoporous methylsilsesquioxane (MSQ) based low-k materials. The surface and bulk properties of as-deposited and O2/CF4 plasma-treated low-k films have been studied after several wet treatments. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
