Paper Title:

Effect of Chemical Solution on the Stability of Low-k Films

Periodical Solid State Phenomena (Volumes 103 - 104)
Main Theme Ultra Clean Processing of Silicon Surfaces VII
Edited by Paul Mertens, Marc Meuris and Marc Heyns
Pages 349-352
DOI 10.4028/www.scientific.net/SSP.103-104.349
Citation Els Kesters et al., 2005, Solid State Phenomena, 103-104, 349
Online since April, 2005
Authors Els Kesters, Quoc Toan Le, Mikhail R. Baklanov, Werner Boullart, Paul W. Mertens
Keywords Contact Angle, Low-k Compatibility, Low-k Films, Spectroscopic Ellipsometry (SE), Strip Plasma
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Abstract

The compatibility of chemical solutions with different pH is studied on microporous silica-based (SiOCH) and mesoporous methylsilsesquioxane (MSQ) based low-k materials. The surface and bulk properties of as-deposited and O2/CF4 plasma-treated low-k films have been studied after several wet treatments.