New Post Etch Polymer Removal Process for Al-Interconnects and Vias in Tank and Spray Tools Using a New Inorganic Chemistry |
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| Journal | Solid State Phenomena (Volumes 103 - 104) |
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| Volume | Ultra Clean Processing of Silicon Surfaces VII |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 381-384 |
| DOI | 10.4028/www.scientific.net/SSP.103-104.381 |
| Citation | Raimund Mellies et al., 2005, Solid State Phenomena, 103-104, 381 |
| Online since | April, 2005 |
| Authors | Raimund Mellies, Stefan Kunz, Franz Nilius, Dieter Mayer, Andreas Kühner |
| Keywords | Al-Interconnects, Dilute Sulfuric Peroxide DSP, ESH, Post-Etch-Residue Removal, Spray-Tool, Vias, Wet-Bench |
| Abstract | A Post-Etch-Residue (PER) removal process for tank and spray tools has been developed using a new inorganic aqueous based chemistry. The performance of this new type of polymer remover, Inosolv 400 Fotopur®, on process wafers is compared with other inorganic chemistries such as DSP (Dilute Sulphuric acid hydrogen Peroxide) and DSP+, containing traces of HF. Inosolv 400 Fotopur® has improved polymer removal capabilities. Furthermore Inosolv 400 Fotopur® does not show any attack of the metal or dielectric layers and is inorganic based and thus environmentally friendly. |
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