In Situ Wafer Processing for Next Generation Devices |
| Journal |
Solid State Phenomena (Volumes 103 - 104) |
| Volume |
Ultra Clean Processing of Silicon Surfaces VII |
| Edited by |
Paul Mertens, Marc Meuris and Marc Heyns |
| Pages |
45-48 |
| DOI |
10.4028/www.scientific.net/SSP.103-104.45 |
| Citation |
Ismail Kashkoush et al., 2005, Solid State Phenomena, 103-104, 45 |
| Online since |
April, 2005 |
| Authors |
Ismail Kashkoush, Lewis Liu, Nick Yialamas, R. Novak |
| Keywords |
In Situ, Dilute Chemicals, Etch Rate, Particle Removal, RCA Cleans, Silicon Consumption, True Adders, Uniformity |
| Full Paper |
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