Evaluation of Wafer Drying Methods for GIGA-LEVEL Device Fabrication |
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| Journal | Solid State Phenomena (Volumes 103 - 104) |
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| Volume | Ultra Clean Processing of Silicon Surfaces VII |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 67-70 |
| DOI | 10.4028/www.scientific.net/SSP.103-104.67 |
| Citation | Gyu Hyun Kim et al., 2005, Solid State Phenomena, 103-104, 67 |
| Online since | April, 2005 |
| Authors | Gyu Hyun Kim, Geun Min Choi, Young Wook Song |
| Keywords | Cleaning, Wafer Dying, Watermark, Watermark Removal Treatment |
| Abstract | This study deals with drying induced water marks dependency on the last cleaning methods, substrate conditions, and drying pre-step delaying times, which are supposed to become a big issue with down scaling of device geometry. The data show that water marks induced by drying failure increase with increasing contact angle on the various surfaces. They are mainly composed of either silicon oxide only or silicon oxide with organic compounds. The former is removed by a dilute HF and/or hot SC-1 treatment and the latter is removed by organic removal cleaning followed by dilute HF etching. |
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