Paper Title:
Performance of a Linear Single Wafer IPA Vapour Based Drying System
  Abstract

In this paper, a single wafer linear IPA vapour based vertical drying technique is presented. Using salt residue tests the performance of this technique is evaluated and compared to spin drying. The equivalent film thickness of evaporating liquid is below 0.05µm for blanket wafers, which is two orders of magnitude less than with spin drying. It is also shown that the presence of surface topography (200nm high TEOS features on Si covered with a chemical oxide) does not significantly influence the drying performance. A study of the process window shows that for the setup evaluated in this work best performance is achieved when the IPA/N2 flow rate is above 20 liters per minute and the drying speed is below 8 mm/s. With a manual prototype already very good particle performance is demonstrated.

  Info
Periodical
Solid State Phenomena (Volumes 103-104)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
75-78
DOI
10.4028/www.scientific.net/SSP.103-104.75
Citation
W. Fyen, S. Arnauts, F. Holsteyns, G. Doumen, G. Vereecke, J. Van Steenbergen, P. W. Mertens, "Performance of a Linear Single Wafer IPA Vapour Based Drying System", Solid State Phenomena, Vols. 103-104, pp. 75-78, 2005
Online since
April 2005
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Price
$32.00
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