Occurrence of Arsenic-Based Defects and Techniques for Their Elimination |
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| Journal | Solid State Phenomena (Volumes 103 - 104) |
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| Volume | Ultra Clean Processing of Silicon Surfaces VII |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 87-92 |
| DOI | 10.4028/www.scientific.net/SSP.103-104.87 |
| Citation | Felicia Goh et al., 2005, Solid State Phenomena, 103-104, 87 |
| Online since | April, 2005 |
| Authors | Felicia Goh, Christopher Lim, Vincent Sih, Zainab Ismail, Simon Y.M. Chooi |
| Keywords | Arsenic Defects, HF, Pre-Silicidation Cleaning |
| Abstract | Arsenic based defects were found on the surfaces of advanced CMOS patterned wafers after the pre-silicidation HF clean. Investigations into the mechanism of formation were done using representative As-implanted bare silicon, polysilicon and HDP silicon oxide films. The nature and composition of these As-based defects are believed to be arsenic and arsenic oxide. Methods of defect removal include the application of hydrogen peroxide containing solutions and hydrogen plasma dry cleaning. |
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