Paper Title:
Occurrence of Arsenic-Based Defects and Techniques for Their Elimination
  Abstract

Arsenic based defects were found on the surfaces of advanced CMOS patterned wafers after the pre-silicidation HF clean. Investigations into the mechanism of formation were done using representative As-implanted bare silicon, polysilicon and HDP silicon oxide films. The nature and composition of these As-based defects are believed to be arsenic and arsenic oxide. Methods of defect removal include the application of hydrogen peroxide containing solutions and hydrogen plasma dry cleaning.

  Info
Periodical
Solid State Phenomena (Volumes 103-104)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
87-92
DOI
10.4028/www.scientific.net/SSP.103-104.87
Citation
F. Goh, C. Lim, V. Sih, Z. Ismail, S. Y.M. Chooi, "Occurrence of Arsenic-Based Defects and Techniques for Their Elimination", Solid State Phenomena, Vols. 103-104, pp. 87-92, 2005
Online since
April 2005
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$32.00
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