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Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks

Journal Solid State Phenomena (Volumes 103 - 104)
Volume Ultra Clean Processing of Silicon Surfaces VII
Edited by Paul Mertens, Marc Meuris and Marc Heyns
Pages 93-96
DOI 10.4028/www.scientific.net/SSP.103-104.93
Citation M. Claes et al., 2005, Solid State Phenomena, 103-104, 93
Online since April, 2005
Authors M. Claes, Vasile Paraschiv, S. Beckx, M. Demand, W. Deweerd, Sylvain Garaud, H. Kraus, Rita Vos, James Snow, Werner Boullart, Stefan De Gendt
Keywords Dry Etch Residue Removal, High-k, Metal Gate, Selective Wet Etching
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