Paper Title:
Texture Control in Manufacturing of ULSI Devices
  Abstract

The rapid adoption of damascene copper processing has brought about an increased need to understand and control microstructure in the barrier, seed and electroplated copper layers during manufacture. We will discuss an in-line, x-ray diffraction based metrology for rapidly characterizing thin film polycrystalline microstructures on 300 mm silicon wafers in terms of crystallographic texture, phase composition, and film thickness. The microstructure control plays an increasingly important role in improving the performance and reliability of ULSI devices that use the damascene copper technology at 0.13-µm node and below. The problems related to delamination, stress voiding, and electromigration failures could be mitigated by the selection of proper materials, processing methods, and manufacturing tools. The optimum process would result in a tailored microstructure of barrier/seed/electroplated copper aggregate. At the same time, the microstructure could be used as an internal sensor, sensitive to process excursions and providing guidance for the corrective actions. The texture and crystallographic phase data can be used as a direct measure of the deposition process in terms of film quality, reproducibility, and stability over time. The spatial distribution of crystallographic texture and phase can be measured on a single wafer in order to check wafer uniformity. More importantly, the same measurements can be carried out at predetermined intervals on wafers from a single deposition tool, and the results used to create a database that can be applied to trend charting and tool qualification. Examples of microstructure control in damascene copper processing include: process development and qualification, process control and stability, deposition tool qualification, and on-line R&D. Examples of texture control will refer to materials and processes typical of damascene copper technology for ULSI. A typical processing route includes the PVD deposition of a barrier layer and copper seed layer, followed by copper electroplate (EP), anneal, and chemical-mechanical planarization (CMP). All the processing steps affect the texture of annealed copper, and therefore affect directly the performance of interconnects.

  Info
Periodical
Solid State Phenomena (Volume 105)
Edited by
C. Esling, M. Humbert, R.A. Schwarzer and F. Wagner
Pages
101-106
DOI
10.4028/www.scientific.net/SSP.105.101
Citation
K. J. Kozaczek, "Texture Control in Manufacturing of ULSI Devices", Solid State Phenomena, Vol. 105, pp. 101-106, 2005
Online since
July 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Zhu Ji Jin, Min Zhang, Dong Ming Guo, Ren Ke Kang
Abstract:Copper electroforming, together with rapid prototyping (RP) technology, provides a method for manufacturing EDM electrodes rapidly. However,...
537
Authors: Yun Shan Wang, Neng Wen Liu, Fu Dong Zhu
Abstract:In order to improve the service life of copper crystallizer, a layer of Ni-based alloy on thick copperplate surface was performed by plasma...
1061
Authors: Hao Chen, Gang Tao
Abstract:Copper fragments are found to adhere on penetration channel wall after copper jets penetrate steel target, and the research on it is helpful...
641
Authors: Yong Ping Ai, Ying Ying Zeng, Li Jun Liu, Xiao Ming Huang, Tai Ping Zhou
Abstract:This paper is to study the influence of Ar+ energy of bombardment Cu target and low energy assisted bombardment on Cu-W film structure in the...
448
Authors: You Hua Fan, Chang Zhu Li, Ze Jun Chen, Hong Chen
Chapter 11: Thin Films/Surface Engineering/Coatings
Abstract:Superhydrophobic copper wafer was prepared using a sol-gel deposition method in the paper. The best superhydrophobic film was prepared with...
1777