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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

• Papers
• Abstracts

• p4 Committees   [ 33 K ]
• p5 Preface   [ 23 K ]
• p1 Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion   [ 222 K ]
  Authors: Vladimir V. Voronkov, Robert J. Falster
• p11 Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material   [ 590 K ]
  Authors: Timo Müller, G. Kissinger, P. Krottenthaler, C. Seuring, R. Wahlich, Wilfried von Ammon
• p17 Oxygen Precipitation in Nitrogen Doped CZ Silicon   [ 400 K ]
  Authors: G. Kissinger, Timo Müller, Andreas Sattler, W. Häckl, M. Weber, U. Lambert, A. Huber, P. Krottenthaler, Hans Richter, Wilfried von Ammon
• p25 From Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS Structures   [ 450 K ]
  Authors: G. Benassayag, M. Shalchian, Jeremie Grisolia, C. Bonafos, S.M. Atarodi, A. Claverie
• p33 Passivation of Ge Nanocrystals in SiO₂   [ 233 K ]
  Authors: Jesper Skov Jensen, Tom P. Leervad Pedersen, Rui Pereira, Pia Bomholt, Jacques Chevallier, Ole Hansen, Arne Nylandsted Larsen, Brian Bech Nielsen
• p39 The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix   [ 1 M ]
  Authors: I.E. Tyschenko, A.B. Talochkin, E.N. Vandyshev, A.G. Cherkov, Andrzej Misiuk
• p45 Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs   [ 228 K ]
  Authors: Y. Amhouche, K. Rais
• p53 Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiN_x Films   [ 276 K ]
  Authors: Sofia A. Arzhannikova, M.D. Efremov, V.A. Volodin, G.N. Kamaev, D.V. Marin, S.A. Soldatenkov, V.S. Shevchuk, S.A. Kochubei, A.A. Popov, Yu. A. Minakov
• p59 Stability of Emission Properties of Silicon Nanostructures   [ 194 K ]
  Authors: M. Baran, L. Khomenkova, N. Korsunska, T. Stara, Moissei K. Sheinkman, V. Yukhymchuk, V. Khomenkov, Y. Goldstein, J. Jedrzejewski, E. Savir
• p65 Blue Photoluminescence from Quantum Size Silicon Nanopowder   [ 296 K ]
  Authors: M.D. Efremov, V.A. Volodin, D.V. Marin, Sofia A. Arzhannikova, M.G. Ivanov, S.V. Gorajnov, A.I. Korchagin, V.V. Cherepkov, A.V. Lavrukhin, S.N. Fadeev, R.A. Salimov, S.P. Bardakhanov
• p71 Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO₂ Layer Obtained by Low Energy Ion Implantation   [ 414 K ]
  Authors: Jeremie Grisolia, M. Shalchian, G. Benassayag, H. Coffin, C. Bonafos, C. Dumas, S.M. Atarodi, A. Claverie
• p77 Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO₂ Layer   [ 339 K ]
  Authors: I.E. Tyschenko, A.A. Frantsuzov, O.V. Naumova, B.I. Fomin, D.V. Nikolaev, V.P. Popov
• p83 Ge Nanoclusters in GeO₂: Synthesis and Optical Properties   [ 1 M ]
  Authors: V.A. Volodin, E.B. Gorokhov, D.V. Marin, A.G. Cherkov, Anton K. Gutakovskii, M.D. Efremov