Paper Title:
Electrical Properties of Clustered and Precipitated Iron in Silicon
  Abstract

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
109-114
DOI
10.4028/www.scientific.net/SSP.108-109.109
Citation
R. Khalil, V. V. Kveder, W. Schröter, M. Seibt, "Electrical Properties of Clustered and Precipitated Iron in Silicon", Solid State Phenomena, Vols. 108-109, pp. 109-114, 2005
Online since
December 2005
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