Electrical Properties of Clustered and Precipitated Iron in Silicon |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 109-114 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.109 |
| Citation | R. Khalil et al., 2005, Solid State Phenomena, 108-109, 109 |
| Online since | December, 2005 |
| Authors | R. Khalil, Vitaly V. Kveder, Wolfgang Schröter, Michael Seibt |
| Keywords | DLTS, Extended Defects, Iron, Silicide Precipitates, Silicon |
| Abstract | Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces. |
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