Paper Title:
Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material
  Abstract

Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
11-16
DOI
10.4028/www.scientific.net/SSP.108-109.11
Citation
T. Müller, G. Kissinger, P. Krottenthaler, C. Seuring, R. Wahlich, W. von Ammon, "Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material", Solid State Phenomena, Vols. 108-109, pp. 11-16, 2005
Online since
December 2005
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Price
$32.00
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