Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 11-16 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.11 |
| Citation | Timo Müller et al., 2005, Solid State Phenomena, 108-109, 11 |
| Online since | December, 2005 |
| Authors | Timo Müller, G. Kissinger, P. Krottenthaler, C. Seuring, R. Wahlich, Wilfried von Ammon |
| Keywords | Argon Anneal, Getter Efficiency, Oxygen Precipitation, Precipitate Growth, Slip Prevention, Upper Yield Stress |
| Abstract | Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial. |
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