Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations |
| Journal |
Solid State Phenomena (Volumes 108 - 109) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by |
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages |
125-132 |
| DOI |
10.4028/www.scientific.net/SSP.108-109.125 |
| Citation |
Wolfgang Windl, 2005, Solid State Phenomena, 108-109, 125 |
| Online since |
December, 2005 |
| Authors |
Wolfgang Windl |
| Keywords |
Ab Initio, Diffusion-Reaction Coefficients, Interface Segregation, Nitrogen Diffusion |
| Full Paper |
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