Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 133-138 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.133 |
| Citation | V.A. Borodin et al., 2005, Solid State Phenomena, 108-109, 133 |
| Online since | December, 2005 |
| Authors | V.A. Borodin, M.O. Ruault, Mariya G. Ganchenkova, F. Fortuna |
| Keywords | Ab Initio Simulation, Cobalt Disilicide, Precipitation, Silicon, TEM |
| Abstract | The paper presents the results of experimental in-situ observations of cobalt disilicide nucleation in Co+ implanted silicon and ab initio simulations of energies of small cobalt and cobaltvacancy clusters. Based on these results, microscopic nucleation mechanisms of different types of CoSi2 precipitates are discussed. |
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