Paper Title:
Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon
  Abstract

The paper presents the results of experimental in-situ observations of cobalt disilicide nucleation in Co+ implanted silicon and ab initio simulations of energies of small cobalt and cobaltvacancy clusters. Based on these results, microscopic nucleation mechanisms of different types of CoSi2 precipitates are discussed.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
133-138
DOI
10.4028/www.scientific.net/SSP.108-109.133
Citation
V.A. Borodin, M.O. Ruault, M. G. Ganchenkova, F. Fortuna, "Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon", Solid State Phenomena, Vols. 108-109, pp. 133-138, 2005
Online since
December 2005
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