Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 163-168 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.163 |
| Citation | M. Badylevich et al., 2005, Solid State Phenomena, 108-109, 163 |
| Online since | December, 2005 |
| Authors | M. Badylevich, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan |
| Keywords | Dislocations, Magnetic Field, Oxygen, Silicon, Spin-Dependent Reactions, Unlocking Stress |
| Abstract | We investigated the effect of magnetic field on the unlocking stress for dislocations in Cz-Si, measured at 600oC, depending on the thermal prehistory of samples. The effect increases with increasing of the duration of sample annealing at 600oC before the magnetic field treatment. The experimental data are consistent with the assumption that the magnetic field stimulate some changes in configuration of oxygen accumulated at dislocations before the magnetic field treatment, but not the state of oxygen in a bulk. |
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