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Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon

Journal Solid State Phenomena (Volumes 108 - 109)
Volume Gettering and Defect Engineering in Semiconductor Technology XI
Edited by B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages 175-180
DOI 10.4028/www.scientific.net/SSP.108-109.175
Citation A. Carvalho et al., 2005, Solid State Phenomena, 108-109, 175
Online since December, 2005
Authors A. Carvalho, R. Jones, João A.P. Coutinho, Vitor J.B. Torres, Patrick R. Briddon
Keywords Defect, Ion-Implantation, Self-Interstitial, Silicon
Abstract

We report on the energetics, electrical and optical activity of small self-interstitial (I3 and I4) clusters in Si, found from ab-initio density-functional modeling studies. I4 possesses nine local vibrational modes above the Raman edge, which account for up to three dipole-allowed vibronic transitions observed in recent experiments associated with the X-photoluminescent line. Another prominent photoluminescent line (known as the W-line) that shows a trigonal stress-induced splitting pattern, has been previously assigned to I3. Our analysis of the LVMs of a metastable form of I3 support this assignment.

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