Paper Title:
The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon
  Abstract

Cz-grown, carbon-doped silicon samples were irradiated by fast neutrons. We investigated the annealing behaviour of oxygen-related defects, by infrared spectroscopy. We studied the reaction channels leading to the formation of various VmOn defects and in particular the VOn defects formed by the accumulation of oxygen atoms and vacancies in the initially produced by the irradiation VO defects, as the annealing temperature ramps upwards. We mainly focused on bands appearing in the spectra above 450 oC. A band at 1005 cm-1 is found to be the convolution of two bands at 1004 and 1009 cm-1. The latter band has the same thermal stability with the 983 cm-1 of the VO4 defect and therefore is also attributed to this defect. The former band has the same thermal stability with three other bands at 965, 1034 and 1048 cm-1. These four bands may be attributed to VOn (n=5,6) defects, although other VmOn complexes are also potential candidates. Furthermore, we found that pre-treatments of the samples at 1000 oC, with or without the application of high hydrostatic pressure lead to an increase in the concentration of the VO2, VO3 and generally VOn defects in comparison with that of the untreated samples.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
205-210
DOI
10.4028/www.scientific.net/SSP.108-109.205
Citation
C. A. Londos, G.D. Antonaras, M.S. Potsidi, A. Misiuk, V. V. Emtsev, "The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon", Solid State Phenomena, Vols. 108-109, pp. 205-210, 2005
Online since
December 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Vitalii V. Kozlovski, Elena V. Bogdanova, Valentin V. Emtsev, Konstantin V. Emtsev, Alexander A. Lebedev, V.N. Lomasov
Abstract:A comparison study of radiation damage in n-type silicon grown by the floating zone technique and n-type silicon carbide grown by the...
385
Authors: Charalamos A. Londos, G.D. Antonaras, M.S. Potsidi, Efstratia N. Sgourou, I.V. Antonova, Andrzej Misiuk
Abstract:Fast neutron irradiations on pre-treated Cz-grown silicon were carried out. The pretreatments involved thermal anneals at 450 oC and 650 oC...
351
Authors: Y.J. Zhang, A.H. Deng, You Wen Zhao, J. Yu, X.X. Yu, X. Cheng, Y.L. Zhou, J.J. Long
Abstract:Positron annihilation lifetime (PAL) spectroscopy,photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC)...
134
Authors: Charalamos A. Londos, A. Andrianakis, D. Aliprantis, Efstratia N. Sgourou, Valentin V. Emtsev, H. Ohyama
Abstract:We present infrared (IR) spectroscopy measurements on carbon-rich, germanium-doped Czochralski-grown (Cz-Si) subjected to irradiation with 2...
187
Authors: Charalamos A. Londos, Efstratia N. Sgourou, A. Andrianakis, Andrzej Misiuk, Valentin V. Emtsev, H. Ohyama
Chapter 5: Point Defects in Si
Abstract:This paper reports experimental results on the production and annealing of oxygen-vacancy related (VOn, 1<n<5) and...
147