Paper Title:
Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors
  Abstract

The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard and oxygenated float zone silicon has been studied. A new type of thermal donors has been found in as-treated diodes. These thermal donors are unstable and can be eliminated by heat-treatment at 200-250°C. After irradiation with 3.5 MeV electrons the detectors had been annealed at temperatures of 50-350 °C. It has been found that preliminary hydrogenation at 300 °C leads to disappearance of main vacancy-type radiation defects at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors. Preliminary irradiation influences on both these processes.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
217-222
DOI
10.4028/www.scientific.net/SSP.108-109.217
Citation
L.F. Makarenko, F.P. Korshunov, S.B. Lastovski, S. B. Lastovskii, N.M. Kazuchits, M.S. Rusetsky, E. Fretwurst, G. Lindström, M. Moll, I. Pintilie, N.I. Zamiatin, "Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors", Solid State Phenomena, Vols. 108-109, pp. 217-222, 2005
Online since
December 2005
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Price
$32.00
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