Paper Title:
Metastable VO2 Complexes in Silicon: Experimental and Theoretical Modeling Studies
  Abstract

We report on a combined experimental and theoretical study of the metastable form of the vacancy-dioxygen defect in Si labeled VO∗ 2. Important new experimental observations are the detection of mixed local vibrational modes of VO∗ 2 in 16O,18O co-doped samples, the determination of the position of LVM bands for the negatively charged defect, and an assignment of an acceptor level at about Ec − 0.05 eV. Defect energetics, electrical levels and LVM frequencies of the VO∗ 2 complex are also investigated by ab-initio density-functional modeling.We find it to be a bistable defect which accounts well for the experimental data. The metastable form produces an acceptor state at 0.05 eV below Ec, and can be thought of as a VO defect perturbed by interstitial oxygen.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
223-228
DOI
10.4028/www.scientific.net/SSP.108-109.223
Citation
L.I. Murin, J. L. Lindström, V. P. Markevich, I.F. Medvedeva, V. J.B. Torres, J. Coutinho, R. Jones, P. R. Briddon, "Metastable VO2 Complexes in Silicon: Experimental and Theoretical Modeling Studies", Solid State Phenomena, Vols. 108-109, pp. 223-228, 2005
Online since
December 2005
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$32.00
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