Paper Title:
Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
  Abstract

The electronic properties and structure of a complex incorporating a self-interstitial (I) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO− 2 , IO02 , IO+ 2 , and IO++ 2 ). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/ + +) occupancy level at Ev + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by density-functional calculations, which show that they are accounted for if we consider at least two charge-dependent defect structures.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
273-278
DOI
10.4028/www.scientific.net/SSP.108-109.273
Citation
V. P. Markevich, L.I. Murin, S. B. Lastovskii, I.F. Medvedeva, J. L. Lindström, A. R. Peaker, J. Coutinho, R. Jones, V. J.B. Torres, S. Öberg, P. R. Briddon, "Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon", Solid State Phenomena, Vols. 108-109, pp. 273-278, 2005
Online since
December 2005
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$32.00
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